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T J max = 60 ° C + ?
? ( 5 . 0 A ) 2 ? 43 m Ω ? = 113 ° C
Typical application Example 1:
Requirement:
? 50 ° C
? W
?
?
= 92 μ A
I FT ? Sink =
=
Vbus min ? VC clampMax
= 11 . 47 K Ω , or 11.5K ? ,
Rbias =
Redundant Bus Voltage = -48V (-36V to -60V, 100V
for 100ms transient)
Load Current = 5A load (assume through each
redundant path)
Maximum Ambient Temperature = 60°C
Solution:
A single PI2003 with a suitable MOSFET for each
redundant -48V power source should be used and
configured as shown in figure 13. The VC is biased
from the return line through a bias resistor.
Select a suitable N-Channel MOSFET: Select the
N-Channel MOSFET with voltage rating higher than
the input voltage, Vin, plus any expected transient
voltages, with a low Rds(on) that is capable of
supporting the full load current with margin. For
instance, a 100V rated MOSFET with 10A current
capability is suitable. An exemplary MOSFET
FT pin : Connect the FT pin to to the logic power
supply or to the VC pin via a resistor (R FT ). Make
R FT large (120K ? ) to lower FT sink current.
VC 11 . 0 V
R FT 120 K Ω
VC: Connect each controller to the return path with
a separate bias resistor, Rbias.
Rbias =
IC max + I FT ? Sink
36 V ? 12 V
2 . 0 mA + 0 . 092 mA
1%
Rbias maximum power dissipation is at maximum
input voltage and minimum clamp voltage.
having these characteristic is Si4486EY from Vishay
Siliconix.
From Si4486EY datasheet:
Pd Rbias =
( Vbus max ? VC clampMIN ) 2
Rbias
=
( 60 V ? 12 V ) 2
11 . 5 K Ω
= 200 mW
?
?
?
?
?
?
N-Channel MOSFET
V DS = 100V
I D = 23A continuous drain current at 125°C
V GS ( MAX ) = ± 20V
R θ JA = 50°C/W
R DS(on) =20m ? typical at V GS =10V, T J =25°C
Reverse current threshold is:
Is . reverse =
Vth . reverse
Rds ( on )
=
? 6 mV
20 m Ω
= ? 300 mA
Power dissipation:
Rds(on) is 25m ? maximum at 25°C and will
increase as the temperature increases. Add 40°C to
maximum ambient temperature to compensate for
the temperature rise due to power dissipation. At
100°C (60°C + 40°C) Rds(on) will increase by 63%.
Rds ( on ) = 25 m Ω ? 1 . 63 = 41 m Ω maximum at 100°C
Maximum Junction temperature
T J max = 60 ° C + ?
? ( 5 . 0 A ) 2 ? 41 m Ω ? = 111 ° C
? 50 ° C
? W
?
?
Figure 13: PI2003 in low side -48V application .
Recalculate based on calculated Junction
temperature, 115°C.
At 115°C Rds(on) will increase by 72%.
Rds ( on ) = 25 m Ω ? 1 . 72 = 43 m Ω maximum at 115°C
Picor Corporation ? picorpower.com
PI2003
Rev 1.1
Page 12 of 16
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